收藏本站
IXDN430 / IXDI430 / IXDD430 / IXDS430
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and it’s
load as short and wide as possible. If the driver must be placed
farther than 2” from the load, then the output leads should be
treated as transmission lines. In this case, a twisted-pair
should be considered, and the return line of each twisted pair
should be placed as close as possible to the ground pin of the
driver, and connect directly to the ground terminal of the load.
TTL to High Voltage CMOS Level Translation
(IXDD430 Only)
The enable (EN) input to the IXDD430 is a high voltage
CMOS logic level input where the EN input threshold is ?
V CC , and may not be compatible with 5V CMOS or TTL input
levels. The IXDD430 EN input was intentionally designed
for enhanced noise immunity with the high voltage CMOS
logic levels. In a typical gate driver application, V CC =15V
and the EN input threshold at 7.5V, a 5V CMOS logical high
input applied to this typical IXDD430 application’s EN input
A TTL or 5V CMOS logic low, V TTLLOW =~<0.8V, input applied to the
Q1 emitter will drive it on. This causes the level translator
output, the Q1 collector output to settle to V CESATQ1 +
V TTLLOW =<~2V, which is sufficiently low to be correctly interpreted
as a high voltage CMOS logic low (<1/3V CC =5V for V CC =15V given
in the IXDD430 data sheet.)
A TTL high, V TTLHIGH =>~2.4V, or a 5V CMOS high,
V 5VCMOSHIGH =~>3.5V, applied to the EN input of the circuit in
Figure 29 will cause Q1 to be biased off. This results in Q1
collector being pulled up by R3 to V CC =15V, and provides a
high voltage CMOS logic high output. The high voltage CMOS
logical EN output applied to the IXDD430 EN input will enable
it, allowing the gate driver to fully function as an 30 Amp
output driver.
The total component cost of the circuit in Figure 29 is less
than $0.10 if purchased in quantities >1K pieces. It is
recommended that the physical placement of the level
translator circuit be placed close to the source of the TTL or
CMOS logic circuits to maximize noise rejection.
will be misinterpreted as a logical low, and may cause
undesirable or unexpected results. The note below is for
optional adaptation of TTL or 5V CMOS levels.
The circuit in Figure 29 alleviates this potential logic level
misinterpretation by translating a TTL or 5V CMOS logic
input to high voltage CMOS logic levels needed by the
IXDD430 EN input. From the figure, V CC is the gate driver
power supply, typically set between 8V to 20V, and V DD is
the logic power supply, typically between 3.3V to 5.5V.
Resistors R1 and R2 form a voltage divider network so
that the Q1 base is positioned at the midpoint of the
expected TTL logic transition levels.
Figure 29 - TTL to High Voltage CMOS Level Translator
Vcc
(From gate driver
power supply)
(From logic
Vdd
power supply)
R3
10K
R1
10K
Q1
High Voltage
CMOS EN output
(To IXDD430 EN input)
2N3904
R2
10K
5V CMOS or TTL input
EN
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
www.ixys.com
e-mail: sales@ixys.net
12
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
DS99045A(8/03)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXS839S1T/R IC MOSFET DRIVER SYNC BUCK 8SOIC
JLINK-RX-AD ADAPT BD FOR MINI-JTAG CONNECTOR
JMBADGE2008-B BOARD JM BADGE
JP9902 CONN JACK MOD INSERT W/O HOLES
JTAGJET-C2000 JTAG EMULATOR FOR TI C2000 MCU
JTAGJET-CCS JTAG EMULATOR TI C2000/5000/6000
JTAGJET-OMAP3 JTAG EMULATOR OMAP3 W/DEBUGGER
JTAGJET-TRACE-4M JTAG EMULATOR W/4M TRACE BUFFER
相关代理商/技术参数
IXDS502D1B 功能描述:功率驱动器IC 2 Amps V 4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDT30N120 功能描述:IGBT 晶体管 60 Amps 1200V 2.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXDT30N120AU1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-268AA
IXDT30N120D1 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT with optional Diode
IXE5216EC.C0 制造商:Intel 功能描述:Electronic Component
IXE611P1 功能描述:IC DRIVER MOSF/IGBT HALF 8-PDIP RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IXE611S1 功能描述:IC DRIVER MOSF/IGBT HALF 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
IXE611S1T/R 功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube